Fabrication and investigation of three-dimensional ferroelectric capacitors for the application of FeRAM
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4945405
Reference17 articles.
1. Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition
2. Fabrication of Planar and Three-Dimensional PZT Capacitors with Ir-Based Electrodes Solely by Low-Temperature MOCVD Using a Novel Liquid Ir Precursor
3. Preparation of Pb(ZrxTi1 - x)O3 Films on Trench Structure for High-Density Ferroelectric Random Access Memory
4. Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies
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