NEW METHOD FOR THE MEASUREMENT OF SURFACE ELECTRICAL CONDUCTIVITY OF Si AND Ge BY CLEAVAGE
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1753887
Reference10 articles.
1. Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon
2. Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon
3. Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon
4. LOW ENERGY ELECTRON DIFFRACTION FROM A CLEAVED GERMANIUM SURFACE*
5. Structural Properties of Cleaved Silicon and Germanium Surfaces
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4. The electronic structure of semiconductor surfaces;Journal of Physics and Chemistry of Solids;1984-01
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