High-fluence Si-implanted diamond: Optimum implantation temperature for SiC formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2009073
Reference19 articles.
1. Ion Beam Processing for Silicon-on-Insulator
2. Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron x-ray diffraction
3. Mechanisms in the ion beam synthesis of SiC layers in silicon
4. Ion beam synthesis of graphite and diamond in silicon carbide
5. Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond
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