Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy-Reference-Cited by-同舟云学术

Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

Published:2015-11-09 Issue:19 Volume:107 Page:192101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang L.¹,Laurent J.¹,Chauveau J. M.²³,Sallet V.⁴,Jomard F.⁴,Brémond G.¹

Affiliation:

1. Institut des Nanotechnologies de Lyon (INL), Université de Lyon, CNRS UMR 5270, INSA Lyon, 7 Avenue Jean Capelle, 69621 Villeurbanne, France

2. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS UPR10, rue Bernard Grégory, 06560 Valbonne Sophia Antipolis, France

3. Physics Department, University of Nice Sophia Antipolis (UNS), Parc Valrose, 06103 Nice, France

4. Groupe d'étude de la matière condensée (GEMaC), CNRS - Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats Unis, 78035 Versailles, France

Funder

China Scholarship Council (CSC)

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935349

Reference25 articles.

1. TWO-DIMENSIONAL DOPANT PROFILING BY SCANNING CAPACITANCE MICROSCOPY

2. Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions

3. Scanning capacitance microscopy: Quantitative carrier profiling down to nanostructures

4. Assessing the performance of two-dimensional dopant profiling techniques

5. Advances in AFM for the electrical characterization of semiconductors

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