Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy-Reference-Cited by-同舟云学术

Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

Published:2016-03-28 Issue:13 Volume:108 Page:132103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang L.¹,Chauveau J. M.²³,Brenier R.⁴,Sallet V.⁵,Jomard F.⁵,Sartel C.⁵,Brémond G.¹

Affiliation:

1. Institut des Nanotechnologies de Lyon (INL), Université de Lyon, CNRS UMR 5270, INSA Lyon, Bat. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne, France

2. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS UPR10, rue Bernard Grégory 06560 Valbonne Sophia Antipolis, France

3. Physics Department, University of Nice Sophia Antipolis (UNS), Parc Valrose, 06103 Nice, France

4. Institut Lumière Matière (ILM), Université de Lyon, CNRS UMR 5306, Université Claude Bernard Lyon 1, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne, France

5. Groupe d'Étude de la Matière Condensée (GEMaC), CNRS-Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles, France

Funder

China Scholarship Council (CSC)

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4945100

Reference35 articles.

1. Zinc oxide nanostructures: growth, properties and applications

2. ZnO nanowire lasers