Schottky diodes onn‐type InP with CdOx interfacial layers grown by the adsorption and oxidation method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352027
Reference17 articles.
1. InP MISFET's with Al2O3/Native Oxide double-layer gate insulators
2. An InP MISFET with a power density of 1.8 W/mm at 30 GHz
3. N-channel depletion-mode InP FET with enhanced barrier height gates
4. Schottky diode and field‐effect transistor on InP
5. High-performance submicrometer AlInAs-GaInAs HEMT's
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