Effect of NH3 plasma treatment on the interfacial property between ultrathin HfO2 and strained Si0.65Ge0.35 substrate
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4788907
Reference36 articles.
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3. Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers
4. Study of HfO2 films deposited on strained Si1−xGex layers by atomic layer deposition
5. Structure and dielectric properties of amorphous high-κoxides: HfO2, ZrO2, and their alloys
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