Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity‐induced disordering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98318
Reference11 articles.
1. Low loss GaAs optical waveguides
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3. Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering
4. Impurity‐induced disorder‐delineated optical waveguides in GaAs‐AlGaAs superlattices
5. Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures
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2. Crosstalk characteristics of a 1.3-μm/1.5-μm wavelength demultiplexing photodetector using laser-assisted MOMBE growth;Journal of Lightwave Technology;1999-03
3. Optical displacement measurement with GaAs/AlGaAs-based monolithically integrated Michelson interferometers;Journal of Lightwave Technology;1997-04
4. Polarization-dependent refractive-index change induced by superlattice disordering;IEEE Journal of Quantum Electronics;1996
5. RBS studies of the lattice damage caused by 1 Me V Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05
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