Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97201
Reference11 articles.
1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
2. Disorder of an AlAs‐GaAs superlattice by silicon implantation
3. Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion
4. Disordering of Ga1−xAlxAs‐GaAs quantum well structures by donor sulfur diffusion
5. Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering
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1. Iterative bandgap engineering at selected areas of quantum semiconductor wafers;Optics Express;2009-10-16
2. Characteristics of laser diodes with a partially intermixed GaAs-AlGaAs quantum well;IEEE Journal of Quantum Electronics;1995
3. Ion-implantation- and thermal-anneal-induced intermixing in thin Si/Ge superlattices;Physical Review B;1993-07-15
4. High‐performance planar native‐oxide buried‐mesa index‐guided AlGaAs‐GaAs quantum well heterostructure lasers;Applied Physics Letters;1992-07-20
5. Properties of closely spaced independently addressable lasers fabricated by impurity‐induced disordering;Applied Physics Letters;1990-04-23
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