Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Funder
Sandia National Laboratories, National Nuclear Security Administration
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4920926
Reference21 articles.
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2. Ni/Au Schottky diodes on AlxGa1-xN (0.7
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4. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
5. High carrier concentration in high Al-composition AlGaN-channnel HEMTs
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