Non‐contact electrical characterization of low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106181
Reference8 articles.
1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
2. Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
3. p‐type conductivity control of ZnSe highly doped with nitrogen by metalorganic molecular beam epitaxy
4. The role of impurities in refined ZnSe and other II–VI semiconductors
5. Self‐compensation through a large lattice relaxation inp‐type ZnSe
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