Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation-Reference-Cited by-同舟云学术

Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

Published:2014-03-17 Issue:11 Volume:104 Page:113509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim SangHyeon,Yokoyama Masafumi,Ikku Yuki,Nakane Ryosho,Ichikawa Osamu,Osada Takenori,Hata Masahiko,Takenaka Mitsuru,Takagi Shinichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4869221

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