Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1430529
Reference19 articles.
1. New Oxygen Infrared Bands in Annealed Irradiated Silicon
2. Oxygen-Related Defects in Silicon
3. Infrared studies of defects formed during postirradiation anneals of Czochralski silicon
4. Chapter 6 Some Atomic Configurations of Oxygen
5. Oxygen isotope effect on the 889 cm−1band in silicon
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3. Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon;Applied Surface Science;2012-11
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