Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126095
Reference7 articles.
1. Ensemble interactions in strained semiconductor quantum dots
2. Structural and radiative evolution in quantum dots near theInxGa1−xAs/GaAsStranski-Krastanow transformation
3. Adatom concentration on GaAs(001) during MBE annealing
4. Adatom Densities on GaAs: Evidence for Near-Equilibrium Growth
5. Transmission-electron microscopy study of the shape of buriedInxGa1−xAs/GaAsquantum dots
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2. Photoluminescence Characterization of Interlayer Carrier Injection from Ingaas Quantum Well to Ingaas Surface Quantum Dots with Respect to Gaas Spacer Thickness;2023
3. Impact of growth rate variabilities of quantum dots and capping layer on photoluminescence of epitaxially grown inAs quantum dots;Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII;2020-03-02
4. Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate;Applied Surface Science;2018-06
5. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots;Journal of Applied Physics;2014-10-07
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