Structural and radiative evolution in quantum dots near theInxGa1−xAs/GaAsStranski-Krastanow transformation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.R1726/fulltext
Reference10 articles.
1. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
2. Quantum dot resonant cavity photodiode with operation near 1.3 [micro sign]m wavelength
3. Gas phase depletion and flow dynamics in horizontal MOCVD reactors
4. Critical layer thickness for self-assembled InAs islands on GaAs
5. In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001)
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