Impact of the gate material on the interface state density of metal–oxide–silicon devices with an ultrathin oxide layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369531
Reference9 articles.
1. CMOS scaling into the nanometer regime
2. Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si
3. Impact of the polysilicon doping level on the properties of the silicon/oxide interface in polysilicon/oxide/silicon capacitor structures
4. Oxide Thickness‐ and Bias‐Dependence of Postmetallization Annealing of Interface States in Metal‐Oxide‐Silicon Diodes
5. Surface-potential dependence of interface-state passivation in metal–tunnel-oxide–silicon diodes
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1. Metal Gate Electrode for Advanced CMOS Application;High-k Gate Dielectrics for CMOS Technology;2012-08-23
2. Effects of fluorine and chlorine on the gate oxide integrity of W/TiN/SiO2/Si metal–oxide–semiconductor structure;Thin Solid Films;2005-07
3. Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Hydroxylamide and Water;Chemical Vapor Deposition;2004-03
4. Effect of Si cap layer on parasitic channel operation in Si/SiGe metal–oxide–semiconductor structures;Journal of Applied Physics;2003-03-15
5. Electrical characterization of low thermal budget gate oxides on Si/Si0.8Ge0.2/Si substrates;Solid-State Electronics;2002-07
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