Ultraviolet laser‐induced oxidation of silicon: The effect of oxygen photodissociation upon oxide growth kinetics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341263
Reference14 articles.
1. A review of laser–microchemical processing
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4. Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high‐resolution XPS
5. Kinetics of ultrathin SiO2growth
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