Strain‐induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98320
Reference14 articles.
1. Mass‐action control of AlGaAs and GaAs growth in molecular beam epitaxy
2. Reflection high-energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown AlxGa1−xAs
3. Thermodynamic aspects of molecular beam epitaxy: High temperature growth in the GaAs/Ga1−xAlxAs system
4. Thermodynamic analysis of molecular beam epitaxy of III–V semiconductors
5. Residual Carbon and Oxygen Surface Contamination of Chemically Etched GaAs (001) Substrates
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