Ge/Si quantum-dot metal–oxide–semiconductor field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1488688
Reference24 articles.
1. Self-assembled Ge dots: Growth, characterization, ordering, and applications
2. Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots
3. Mid-infrared photocurrent measurements on self-assembled Ge dots in Si
4. Midinfrared photoconductivity of Ge/Si self-assembled quantum dots
5. Interlevel Ge/Si quantum dot infrared photodetector
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2. Silicon-Based Nanoheterostructures With Quantum Dots;Advances in Semiconductor Nanostructures;2017
3. Strain-compensated Ge/Si1−C quantum dots with Si mediating layers grown by molecular beam epitaxy;Journal of Crystal Growth;2015-09
4. Ge/Si Heterostructures with Dense Chains of Stacked Quantum Dots;Journal of Nanoelectronics and Optoelectronics;2014-04-01
5. Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices;Opto-Electronics Review;2014-01-01
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