Interface traps in InP/InAlGaAsp‐njunctions by metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359217
Reference12 articles.
1. Preparation of (AlxGa1−x)yIn1−yAs (0≤x≤0.5,y=0.47) lattice matched to InP substrates by molecular beam epitaxy
2. Preparation and properties of molecular beam epitaxy grown (Al0.5Ga0.5)0.48In0.52As
3. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
4. Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga0.92In0.08As(n+)/GaAs(p) heterojunctions
5. Fe2+-Fe3+level as a recombination center inIn0.53Ga0.47As
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1. Impact of Interface Traps and Zn Diffusion on Performance of Lateral Hybrid III-V/Si Photodetectors;2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2020-04
2. Defect-related degradation of III-V/Silicon 1.55 µm DBR laser diodes;Silicon Photonics XIII;2018-02-22
3. Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- $\mu \text{m}$ DBR Laser Diodes;IEEE Journal of Quantum Electronics;2017-08
4. Capacitance and conductance of semiconductor heterojunctions with continuous energy distribution of interface states;Journal of Applied Physics;1996-12-15
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