Author:
Ihlefeld Jon F.,Brumbach Michael,Atcitty Stanley
Funder
U.S. Department of Energy
Subject
Physics and Astronomy (miscellaneous)
Reference27 articles.
1. Periodicity in the band gap variation of Ln2X3 (X = O, S, Se) in the lanthanide series
2. High-κ gate dielectrics: Current status and materials properties considerations
3. M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, C. M. Lee, and J. I. Chyi, in IEEE International Symposium on Compound Semiconductors (IEEE, New York, 2000), pp. 495–500.
4. Gd2O3/GaN metal-oxide-semiconductor field-effect transistor
5. Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs
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