Low-energy electro- and photo-emission spectroscopy of GaN materials and devices-Reference-Cited by-同舟云学术

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Low-energy electro- and photo-emission spectroscopy of GaN materials and devices

Published:2015-03-21 Issue:11 Volume:117 Page:112814
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Piccardo Marco,Iveland Justin,Martinelli Lucio,Nakamura Shuji,Choi Joo Won,Speck James S.,Weisbuch Claude,Peretti Jacques

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4913928

Reference27 articles.

1. Experimental Evidence for Optical Population of theXMinima in GaAs

2. Photoemission from activated gallium arsenide. I. Very-high-resolution energy distribution curves

3. Novel photoemission approach to hot-electron transport in semiconductors

4. Simple concepts in the measurement of the energy distribution and spin polarization of an electron beam

5. White light emitting diodes with super-high luminous efficacy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review—The Physics of Recombinations in III-Nitride Emitters;ECS Journal of Solid State Science and Technology;2019-12-13

2. Efficiency Droop of Nitride-Based Light-Emitting Diodes;Handbook of Solid-State Lighting and LEDs;2017-06-07

3. Fermi level pinning characterisation on ammonium fluoride-treated surfaces of silicon by energy-filtered doping contrast in the scanning electron microscope;Scientific Reports;2016-08-31

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