1. Oatley, C. W. & Everhart, T. E. The examination of p-n junctions with the scanning electron microscope. Journal of Electronics 2, 568–570 (1957).
2. Perovic, D. D. et al. Field-emission SEM imaging of compositional and doping layer semiconductor superlattices. Ultramicroscopy 58, 104–113 (1995).
3. Perovic, D. D., Turan, R. & Castell, M. R. Quantitative imaging of semiconductor doping distributions using a scanning electron microscope. In “The Electron”, Proceedings of the International Centennial Symposium on the Electron, Cambridge, United Kingdom, 1997, Book 687, edited by Kirkland, A. & Brown, P. D., 258–265 (IOM Communications Ltd, London, 1998).
4. Sealy, C. P., Castell, M. R. & Wilshaw, P. R. Mechanism for secondary electron dopant contrast in the SEM. Journal of Electron Microscopy 49, 311–321 (2000).
5. Elliot, S. L., Broom, R. F. & Humphreys, C. J. Dopant profiling with the scanning electron microscope – A study of Si. Journal of Applied Physics 91, 9116 (2002).