GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

Author:

Nelson George T.1,Juang Bor-Chau2,Slocum Michael A.1ORCID,Bittner Zachary S.1ORCID,Laghumavarapu Ramesh B.2,Huffaker Diana L.2,Hubbard Seth M.1ORCID

Affiliation:

1. NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, New York 14623, USA

2. Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA

Funder

NSF | ENG | Division of Electrical, Communications and Cyber Systems

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference26 articles.

1. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

2. Development of InGaP/GaAs/InGaAs inverted triple junction concentrator solar cells

3. Quadruple-Junction Inverted Metamorphic Concentrator Devices

4. Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells

5. N. Karam , R. Sherif , P. Pien , G. S. Kinsey , D. D. Krut , S. Mesropian , W. Hong , A. Zakaria , M. Haddad , C. Fetzer , D. C. Law , H. Yoon , M. J. Romero , K. M. Edmondson , A. Boca , and R. King , in The 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain (01–05 September 2008), pp. 24–4.

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