Computer simulation of damage processes during ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339400
Reference11 articles.
1. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
2. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
3. Dynamic simulation of ion implantation with damaging processes included
4. Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation
5. Computer simulation of collision cascades in monazite
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2. Incident angle dependence in the transient sputtering of an amorphous Si surface by sub-keV O2+ ion bombardment;Surface and Interface Analysis;2006
3. Electronic stopping of Si from a three-dimensional charge distribution;Physical Review B;2000-08-01
4. Electronic stopping of silicon from a 3D charge distribution;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-04
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