Compensation centers in ZnSeTe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371645
Reference14 articles.
1. Graded band gap ohmic contact top‐ZnSe
2. Ohmic contacts top-type ZnSe using ZnTe/ZnSe multiquantum wells
3. Characteristics of Cl‐doped ZnSe layers grown by molecular‐beam epitaxy
4. Doping of zinc‐selenide‐telluride
5. Reflectivity ofZnSexTe1−xSingle Crystals
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1. Ternary semiconductor ZnSe 0.7 Te 0.3 nanowires;Micro & Nano Letters;2013-08
2. Synthesis of Cd-free water-soluble ZnSe1−xTex nanocrystals with high luminescence in the blue region;Journal of Colloid and Interface Science;2008-05
3. Atomic environment of Fe following high-temperature implantation in InP;Physical Review B;2003-12-31
4. Quantum confinement of Te bound exciton in ZnSe/ZnSe1−xTex and ZnSe/Zn1−yCdySe quantum wells;Materials Chemistry and Physics;2003-07
5. Optical properties of molecular beam epitaxy-grown ZnSexTe1−x II–VI semiconductor alloys;Journal of Electronic Materials;2001-06
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