The wavelength shift in GaInAsSb photodiode structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359088
Reference6 articles.
1. Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range
2. High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range
3. GaInAsSb/GaSb pn photodiodes for detection to 2.4 μm
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2. Temperature dependence of band gap ratio and Q-factor defect mode in a semiconductor quaternary alloy hexagonal photonic-crystal hole slab;Applied Physics A;2016-03-10
3. Electrong-factor study in Ga1 −xInxAsySb1 −y–GaSb and GaSb–Ga1 −xInxAsySb1 −y–GaSb quaternary alloy semiconductor spherical quantum dots;Semiconductor Science and Technology;2011-09-06
4. Study of temperature and indium concentration-dependent dielectric constant and electron affinity effects on the exciton optical transition and binding energy in spherical quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2010-11
5. Optical response of confined excitons in GaInAsSb/GaSb Quantum Dots heterostructures;Journal of Physics: Conference Series;2009-05-01
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