GaInAsSb/GaSb pn photodiodes for detection to 2.4 μm-Reference-Cited by-同舟云学术

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GaInAsSb/GaSb pn photodiodes for detection to 2.4 μm

Published:1991 Issue:14 Volume:27 Page:1237
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Tournié E.,Lazzari J.-L.,Villemain E.,Joullié A.,Gouskov L.,Karim M.,Salesse I.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19910776?crawler=true&mimetype=application/pdf

Reference13 articles.

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trap-assisted tunneling current and quantum efficiency loss in InGaAsSb short wavelength infrared photo detectors;Semiconductor Science and Technology;2022-10-13

2. High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE;Infrared Physics & Technology;2016-11

3. InP-Based Active and Passive Components for Communication Systems at 2 μm;Journal of Lightwave Technology;2015-03-01

4. Surface passivation of GaInAsSb photodiodes with thioacetamide;physica status solidi (c);2007-04

5. Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm;Journal of Electronic Materials;2006-08

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