Site-selection of Si1−xGex quantum dots on patterned Si(001) substrates
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/apl/109/19/1.4967383.pdf?itemId=/content/aip/journal/apl/109/19/10.1063/1.4967383&mimeType=pdf&containerItemId=content/aip/journal/apl
Reference37 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Evolution of coherent islands inSi1−xGex/Si(001)
3. Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates
4. Ge quantum dot molecules and crystals: Preparation and properties
5. Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template
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2. Epitaxial Growth of Planar Hutwires on Silicon‐on‐Insulator Substrates;physica status solidi (a);2022-05-27
3. Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires;Nano Letters;2021-09-28
4. Light-Emission from Ion-Implanted Group-IV Nanostructures;Topics in Applied Physics;2021
5. Quantum dot molecule formation in Si-Ge heteroepitaxy on pit–patterned Si(001) substrate: A theoretical study;Journal of Crystal Growth;2020-04
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