Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors-Reference-Cited by-同舟云学术

Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors

Published:2017-09-25 Issue:13 Volume:111 Page:133504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chiang Hsiao-Cheng¹,Chang Ting-Chang²³^ORCID,Liao Po-Yung²,Chen Bo-Wei⁴,Tsao Yu-Ching²,Tsai Tsung-Ming¹,Chien Yu-Chieh¹,Yang Yi-Chieh¹,Chen Kuan-Fu²,Yang Chung-I⁵,Hung Yu-Ju⁴,Chang Kuan-Chang⁶,Zhang Sheng-Dong⁶,Lin Sung-Chun⁷,Yeh Cheng-Yen⁷

Affiliation:

1. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

2. Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

3. Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

4. Department of Photonics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

5. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

6. Department of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China

7. New Technology Development, HannStar Display Corporation, Tainan 741, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5004526

Reference13 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

3. Developments in nanocrystal memory

4. Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

5. The Deterioration of a-IGZO TFTs Owing to the Copper Diffusion after the Process of the Source/Drain Metal Formation

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1. Gate Dielectric Breakdown in A-InGaZnO Thin Film Transistors With Cu Electrodes;IEEE Electron Device Letters;2021-06

2. Dynamic switching-induced back-carrier-injection in a-InGaZnO thin film transistors;Journal of Physics D: Applied Physics;2020-10-22

3. Electro-static discharge protection analysis and design optimization of interlayer Cu interconnection in InGaZnO thin film transistor backplane;Acta Physica Sinica;2019