A numerical study of the effect of various reactions, pressure and gas mixture ratio on the density distribution of etchant species (H, Br, Br+, and HBr+) in HBr/He plasma
Author:
Affiliation:
1. Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore, Islamabad 45650, Pakistan
Funder
Higher Education Commission, Pakistan (HEC)
Publisher
AIP Publishing
Subject
Condensed Matter Physics
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4945757
Reference33 articles.
1. Low-Temperature Plasma Processing of Materials: Past, Present, and Future
2. Surface science aspects of etching reactions
3. Parameters and composition of HBr plasma under the conditions of glow DC discharge
4. Etching characteristics and mechanism of ZnO thin films in inductively coupled HBr/Ar plasma
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1. Computational characterization of capacitive coupled HBr /Cl 2 / O 2 plasma;Contributions to Plasma Physics;2022-07-03
2. Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas;Journal of Vacuum Science & Technology A;2021-07
3. Fluid Simulation of Capacitively Coupled HBr/Ar Plasma for Etching Applications;Plasma Chemistry and Plasma Processing;2016-06-22
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