Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (1122)-plane GaN-Reference-Cited by-同舟云学术

Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (1122)-plane GaN

Published:2006 Issue:11 Volume:100 Page:113109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Masui Hisashi,Baker Troy J.,Iza Michael,Zhong Hong,Nakamura Shuji,DenBaars Steven P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference25 articles.

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3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

4. Analysis of polarization anisotropy along the c axis in the photoluminescence of wurtzite GaN

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