Homo-layer hafnia-based memristor with large analog switching window-Reference-Cited by-同舟云学术

Homo-layer hafnia-based memristor with large analog switching window

Published:2021-01-25 Issue:4 Volume:118 Page:043502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bai Na¹,Tian Baoyi¹,Mao Ge-Qi¹,Xue Kan-Hao¹^ORCID,Wang Tao¹,Yuan Jun-Hui¹^ORCID,Liu Xiaoxin¹,Li Zhaonan¹,Guo Shen¹,Zhou Zuopai¹,Liu Nian²,Lu Hong¹,Tang Xiaodong³,Sun Huajun¹^ORCID,Miao Xiangshui¹

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

2. Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Wuhan 430205, China

3. Key Laboratory of Polarized Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China

Funder

the National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0032556

Reference41 articles.

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4. Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System

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