Band gap state formation in InP (110) induced by 10 and 100 eV argon ion bombardment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371277
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1. Effect of Ar+, He+, and S+ Irradiation on n-InP Single Crystal;Chinese Journal of Chemical Physics;2014-02-27
2. Analysis of GaInAsP laser diodes degraded by light absorption at an active layer of the facet;Electronics and Communications in Japan;2010-02
3. Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound;Applied Surface Science;2009-10
4. Inductively Coupled Argon Plasma-Enhanced Quantum-Well Intermixing: Cap Layer Effect and Plasma Process Influence;IEEE Journal of Quantum Electronics;2009-08
5. Electrostatic-Discharge-Induced Degradation Caused by Argon Ion Bombardment in Facet-Coating Process of GaInAsP/InP Laser Diode;Japanese Journal of Applied Physics;2008-10-17
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