1.54 μm photoluminescence ofin situerbium‐oxygen co‐doped silicon films grown by ion‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360072
Reference19 articles.
1. Mater. Res. Soc. Symp. Proc.301(1993).MRSPDH0272-9172
2. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
3. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
4. Optical Activation of Er3+Implanted in Silicon by Oxygen Impurities
5. Microstructure of erbium‐implanted Si
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