The role of hydrostatic stress in determining the bandgap of InN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2784199
Reference17 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Optical properties of InN—the bandgap question
3. Electron mobility in indium nitride
4. Effects of electron concentration on the optical absorption edge of InN
5. Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
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