Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1586985
Reference31 articles.
1. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
3. High-κ gate dielectrics: Current status and materials properties considerations
4. Band offsets of wide-band-gap oxides and implications for future electronic devices
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