Deep levels in alpha‐irradiated platinum dopedn‐type silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357549
Reference13 articles.
1. On the behavior of interaction of a Pt‐related center with radiation‐induced defects and the trace platinum detection
2. The interaction of radiation defects and Pd-related centers in silicon
3. Interaction of α‐radiation induced defects with Pd‐related deep levels in silicon
4. Interaction of gold‐related and irradiation‐induced defects in silicon
5. Identification of the energy levels of Si:Rh
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Doping compensation for increased robustness of fast recovery silicon diodes;Microelectronics Reliability;2010-01
2. Study of the alpha irradiation and thermal annealing of gold‐dopedn‐type silicon;Journal of Applied Physics;1995-06
3. Study of deep levels in alpha‐irradiated silver‐dopedp‐type silicon;Journal of Applied Physics;1995-05-15
4. Effects of annealing and α irradiation on deep levels in silver‐dopedn‐type silicon;Journal of Applied Physics;1995-04
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