Investigation of the importance of interface and bulk limited transport mechanisms on the leakage current of high dielectric constant thin film capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1620377
Reference49 articles.
1. (Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM
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