Magnitude of the piezoelectric field in (111)B InyGa1−yAs strained‐layer quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354359
Reference13 articles.
1. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
2. Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained‐layer superlattices
3. Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells
4. Optical properties of strained layer (111)B Al0.15Ga0.85As-In0.04Ga0.96as quantum well heterostructures
5. Strain-induced heavy-hole-to-light-hole energy splitting in (111)BpseudomorphicInyGa1−yAs quantum wells
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1. Direct determination of the piezoelectric field using the quantum-confined Stark effect in a strained [111]-oriented zinc-blende MQW-SOA;AIP Advances;2022-10-01
2. Spin Dynamics of Free Carriers in Quantum Wells;Springer Series in Solid-State Sciences;2017
3. Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells;Applied Physics Letters;2016-02-22
4. Extending device performance in photonic devices using piezoelectric properties;SPIE Proceedings;2013-12-07
5. Pseudomorphic growth of InAs on misoriented GaAs for extending quantum cascade laser wavelength;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-11
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