Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4942600
Reference38 articles.
1. Spin Physics in Semiconductors
2. Spin dynamics in semiconductors
3. Spin relaxation inGaAs/AlxGa1−xAsquantum wells
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures;Semiconductor Science and Technology;2018-10-17
2. Angular Dependence of the Spin Photocurrent in a Co−Fe−B/MgO/n−i−p GaAs Quantum-Well Structure;Physical Review Applied;2017-12-20
3. Spin Dynamics of Free Carriers in Quantum Wells;Springer Series in Solid-State Sciences;2017
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