Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2402964
Reference20 articles.
1. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
2. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
3. Back illuminated AlGaN solar-blind photodetectors
4. 320×256 solar-blind focal plane arrays based on AlxGa1−xN
5. Luminescence properties of defects in GaN
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2. Observation of threading dislocations and misfit dislocation half-loops in GaN/AlGaN heterostructures grown on Si using electron channeling contrast imaging;Journal of Applied Physics;2022-09-14
3. Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer;CrystEngComm;2020
4. Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images;Acta Physica Sinica;2020
5. The preparation of different pairs near-ultraviolet AlGaN/GaN DBRs with AlN interlayer;Materials Science in Semiconductor Processing;2018-06
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