Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1458048
Reference8 articles.
1. Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
2. Homoepitaxy of 6H and 4H SiC on nonplanar substrates
3. Equilibrium crystal shapes for 6H AND 4H SiC grown on non-planar substrates
4. Effect of vapor composition on polytype homogeneity of epitaxial silicon carbide
5. Design and Performance of a New Reactor for Vapor Phase Epitaxy of 3C, 6H, and 4H SiC
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3. Evaluation of Refilled Channel Regions in 4H-SiC Buried Gate Static Induction Transistors;Japanese Journal of Applied Physics;2010-03-23
4. On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC();Applied Surface Science;2009-04
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