Homoepitaxy of 6H and 4H SiC on nonplanar substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120683
Reference6 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. SiC liquid-phase epitaxy on patterned substrates
3. Nucleation and step motion in chemical vapor deposition of SiC on 6H‐SiC{0001} faces
4. Morphology analysis in localized crystal growth and dissolution
5. Design and Performance of a New Reactor for Vapor Phase Epitaxy of 3C, 6H, and 4H SiC
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1. Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method;Journal of Crystal Growth;2022-12
2. Epitaxial Growth of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26
3. Evaluation of Refilled Channel Regions in 4H-SiC Buried Gate Static Induction Transistors;Japanese Journal of Applied Physics;2010-03-23
4. Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing;Japanese Journal of Applied Physics;2009-04-20
5. Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition;Japanese Journal of Applied Physics;2004-07-07
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