Measurement of the Auger recombination rate in p-type 0.54 eV GaInAsSb by time-resolved photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1621455
Reference16 articles.
1. InGaAsSb thermophotovoltaic diode: Physics evaluation
2. High-performance GaInAsSb thermophotovoltaic devices with an AlGaAsSb window
3. Lattice-Matched GaInAsSb/AlGaAsSb/GaSb Materials for Thermophotovoltaic Devices
4. Band parameters for III–V compound semiconductors and their alloys
5. Optical constants of Ga1−xInxAsySb1−y lattice matched to GaSb (001): Experiment and modeling
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