Time-resolved temperature measurement and numerical simulation of millisecond laser irradiated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4815872
Reference27 articles.
1. Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing
2. Boron Electrical Activation in Crystalline Si after Millisecond Nonmelting Laser Irradiation
3. Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon
4. Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation
5. Laser bending of brittle materials
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