Unexpected behavior of transient current in thin PZT films caused by grain-boundary conduction-Reference-Cited by-同舟云学术

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Unexpected behavior of transient current in thin PZT films caused by grain-boundary conduction

Published:2017-06-14 Issue:22 Volume:121 Page:224104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Delimova L. A.¹^ORCID,Guschina E. V.²^ORCID,Seregin D. S.³^ORCID,Vorotilov K. A.³,Sigov A. S.³

Affiliation:

1. Division of Solid State Electronics, Ioffe Institute, 194021 Saint-Petersburg, Russian Federation

2. Division of Solid State Physics, Ioffe Institute, 194021 Saint-Petersburg, Russian Federation

3. Moscow Technological University (MIREA), 119454 Moscow, Russian Federation

Funder

Russian Foundation for Basic Research (RFBR)

Russian Academy of Sciences (RAS)

Ministry of Education and Science of the Russian Federation (Minobrnauka)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4985177

Reference60 articles.

1. Processing, Structure, Properties, and Applications of PZT Thin Films

2. Ferroelectric thin films: Review of materials, properties, and applications

3. Applications of Modern Ferroelectrics

4. Effect of Lead Content on Microstructure of Sol-Gel PZT Structures

5. Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3

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1. Porous PZT Films: How Can We Tune Electrical Properties?;Materials;2023-07-22

2. The Electrodegradation Process in PZT Ceramics under Exposure to Cosmic Environmental Conditions;Molecules;2023-04-22

3. Charge Carrier Transport and Polarization in M/PZT/M Structures;Bulletin of the Russian Academy of Sciences: Physics;2023-04

4. Comparison of Characteristics of Thin PZT Films on Si-on-Sapphire and Si Substrates;Physics of the Solid State;2021-12-20

5. Quasi-Stationary Processes of the Dielectric Relaxation in Polycrystalline Thin PZT Films;Physics of the Solid State;2020-10

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