Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3-Reference-Cited by-同舟云学术

Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3

Published:2018-04-23 Issue:17 Volume:112 Page:171605
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Jiaye¹,Han Shaobo²,Luo Weihuang¹,Xiang Shuhuai²,Zou Jianli²,Oropeza Freddy E.³,Gu Meng²^ORCID,Zhang Kelvin H. L.¹⁴

Affiliation:

1. College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China

2. Department of Materials Science and Engineering, Southern University of Science and Technology, No. 1088 Xueyuan Blvd, Shenzhen, Guangdong 518055, China

3. Department of Chemical Engineering and Chemistry, Technische Universiteit Eindhoven, 5600 MB, Netherlands

4. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5029422

Reference58 articles.

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4. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

5. Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy

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