Optical transitions in strained Si1−yCylayers on Si(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112390
Reference17 articles.
1. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
2. Growth and characterization of strain compensated Si1−x−y epitaxial layers
3. Optical band gap of the ternary semiconductor Si1−x−yGexCy
4. Theoretical investigation of random Si-C alloys
5. Stability of strained Si1−yCy random alloy layers
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2. Effects of stress on the dielectric function of strained pseudomorphic Si1−xGexalloys from 0 to 75% Ge grown on Si (001);Journal of Applied Physics;2012-09
3. Nanoscale quantitative stress mapping with atomic force microscopy;Applied Physics Letters;2007-03-12
4. Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si1−yCyalloys on Si (0 0 1);Semiconductor Science and Technology;2006-11-28
5. Composition dependent energy band gaps for the ternary alloy Si1−x−yGexCy;physica status solidi (b);2003-11
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