Passivation of acceptors in InP resulting from CH4/H2reactive ion etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101752
Reference8 articles.
1. Hydrogen in crystalline semiconductors
2. Effect of cooling ambient on electrical activation of dopants in MOVPE of InP
3. Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy
4. Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas
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